Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP6N80E-BE3

N-channel MOSFET in TO-220AB package rated for 800 V drain-source voltage, with a maximum continuous drain current of 5.4 A at 25 °C and 3.4 A at 100 °C, and a maximum power dissipation of 78 W. Features a typical on-state resistance of 0.82 Ω at 10 V gate-source voltage, total gate charge of 44 nC, and avalanche energy rating of 95 mJ. Designed for switch-mode power supplies, power factor correction, and industrial applications. Compliant with RoHS and is lead-free and halogen-free.