Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP6N40D-BE3

N-channel MOSFET in TO-220AB package rated for 400 V drain-source voltage, 6 A continuous drain current at 25 °C, and 104 W power dissipation. Features a maximum on-resistance of 1.0 Ω at 10 V gate drive, 18 nC total gate charge, and 104 mJ single-pulse avalanche energy. Designed for high-efficiency switching in consumer, industrial, and power supply applications.