N-Channel 600V 6.4A (Tc) 62.5W (Tc) Through Hole TO-220AB
Win Source Part Number: 1277761-SIHP690N60E-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP690
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 600V, 6.4A, 62.5W ROHS COMPLIANT: YES
MOSFET N-CH 600V 6.4A TO220AB
| RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2006820 | SIHP690N60E-GE3-ND | 1277761-SIHP690N60E-GE3 | 38AH5929 | SIHP690N60E-GE3 | SIHP690N60E-GE3 |
| Product Name | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 600V, 6.4A, 62.5W Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel |
