MOSFET N-CH 500V 5.3A TO220AB Product overview: SIHP5N50D-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP5N50D-GE3 can be used for catalog matching and distributor lookup.
N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-220AB
Win Source Part Number: 1028567-SIHP5N50D-GE
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHP6N40D-GE3; FQP5N50C; IRF830APBF; FDP5N50; FQP6N40CF; IRF830PBFSIHP5N50DGE
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP5
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 500V 5.3A TO220AB
MOSFET 500V Vds 30V Vgs TO-220AB
MOSFET, N CHANNEL, 500V, 5.3A, TO-220AB-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; On Resistance Rds(on):1.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHP5N50D-GE3 | 742-SIHP5N50D-GE3-ND | 1028567-SIHP5N50D-GE3 | SIHP5N50D-GE3 | SIHP5N50D-GE3 | 99W9510 | 62W0520 |
| Product Name | 500V 5.3A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 500V, 5.3A, To-220Ab-3; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 104 milliwatts | 104000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
