Win Source Part Number: 1209446-SIHP4N80E-GE
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP4
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 800V 4.3A TO220AB
N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole TO-220AB
MOSFET 800V Vds 30V Vgs TO-220AB
MOSFET N-CH 800V 4.3A TO220AB
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1209446-SIHP4N80E-GE3 | SIHP4N80E-GE3 | SIHP4N80E-GE3-ND | SIHP4N80E-GE3 | SIHP4N80E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 69000 milliwatts | 69000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
