Win Source Part Number: 1277760-SIHP38N60E-G
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP38
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 43A (Tc) 313W (Tc) Through Hole TO-220AB
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET N-CH 600V 43A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277760-SIHP38N60E-GE3 | SIHP38N60E-GE3-ND | SIHP38N60E-GE3 | SIHP38N60E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
