Vishay Precision Group 600V 33A MOSFET Transistor SIHP33N60EF-GE3

Description
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB Product overview: SIHP33N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP33N60EF-GE3 can be used for catalog matching and distributor lookup.
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Description
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB Product overview: SIHP33N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP33N60EF-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 33A MOSFET Transistor
278-SIHP33N60EF-GE3
600V 33A MOSFET Transistor 278-SIHP33N60EF-GE3
Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB Product overview: SIHP33N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP33N60EF-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220AB Product overview: SIHP33N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP33N60EF-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHP33N60EF-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP33N60EF-GE3-ND
Single FETs, MOSFETs SIHP33N60EF-GE3-ND
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB

N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Single FETs, MOSFETs - SIHP33N60EF-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHP33N60EF-GE3
Single FETs, MOSFETs SIHP33N60EF-GE3
MOSFET N-CH 600V 33A TO220AB

MOSFET N-CH 600V 33A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277881-SIHP33N60EF-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277881-SIHP33N60EF-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277881-SIHP33N60EF-GE3
Win Source Part Number: 1277881-SIHP33N60EF- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 278W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP33 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277881-SIHP33N60EF-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP33
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP33N60EF-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP33N60EF-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP33N60EF-GE3
MOSFET N-CH 600V 33A TO220AB

MOSFET N-CH 600V 33A TO220AB

Supplier's Site
Mosfet, N Channel, 600V, 33A, To-220Ab-3; Channel Type Vishay - 31Y6763 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 33A, To-220Ab-3; Channel Type Vishay
31Y6763
Mosfet, N Channel, 600V, 33A, To-220Ab-3; Channel Type Vishay 31Y6763
MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-220AB

MOSFET 600V Vds 30V Vgs TO-220AB

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SIHP33N60EF-GE3 SIHP33N60EF-GE3-ND SIHP33N60EF-GE3 1277881-SIHP33N60EF-GE3 SIHP33N60EF-GE3 31Y6763 SIHP33N60EF-GE3
Product Name 600V 33A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 600V, 33A, To-220Ab-3; Channel Type Vishay MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts 600 volts
PD 278000 milliwatts 278000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
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