600V 33A N-Ch MOSFET, 99mR Rds(on), TO-220 Product overview: SIHP33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP33N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 211713-SIHP33N60E-GE
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3508pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
MOSFET N-CH 600V 33A TO220AB
MOSFET, N-CH, 600V, 33A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHP33N60E-GE3 | 211713-SIHP33N60E-GE3 | 742-SIHP33N60E-GE3-ND | SIHP33N60E-GE3 | 880-SIHP33N60E-GE3 | SIHP33N60E-GE3 | 19X1945 |
| Product Name | 600V 33A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP33N60E-GE3 | Single FETs, MOSFETs | MOSFET | MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 33A, To-220Ab; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 278000 milliwatts | 278000 milliwatts | 278000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 |
