Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP30N60E-GE3 SIHP30N60E-GE3

Description
Manufacturer: Vishay Win Source Part Number: 211712-SIHP30N60E-GE 3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 29A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 2600pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP30N60E-GE3 - 211712-SIHP30N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHP30N60E-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - SIHP30N60E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP30N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 600V, 29A, To-220Ab-3; Channel Type Vishay - 68W7067 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS - 880-SIHP30N60E-GE3 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 211712-SIHP30N60E-GE 3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 29A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 2600pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP30N60E-GE3 - 211712-SIHP30N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP30N60E-GE3
211712-SIHP30N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP30N60E-GE3 211712-SIHP30N60E-GE3
Manufacturer: Vishay Win Source Part Number: 211712-SIHP30N60E-GE 3 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 29A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 2600pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211712-SIHP30N60E-GE3
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 29A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 2600pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIHP30N60E-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHP30N60E-GE3
Single FETs, MOSFETs SIHP30N60E-GE3
MOSFET N-CH 600V 29A TO220AB

MOSFET N-CH 600V 29A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHP30N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP30N60E-GE3-ND
Single FETs, MOSFETs SIHP30N60E-GE3-ND
N-Channel 600V 29A (Tc) 250W (Tc) Through Hole

N-Channel 600V 29A (Tc) 250W (Tc) Through Hole

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP30N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP30N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP30N60E-GE3
MOSFET N-CH 600V 29A TO220AB

MOSFET N-CH 600V 29A TO220AB

Supplier's Site
Mosfet, N Channel, 600V, 29A, To-220Ab-3; Channel Type Vishay - 68W7067 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 29A, To-220Ab-3; Channel Type Vishay
68W7067
Mosfet, N Channel, 600V, 29A, To-220Ab-3; Channel Type Vishay 68W7067
MOSFET, N CHANNEL, 600V, 29A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 29A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHP30N60E-GE3
MOSFET SIHP30N60E-GE3
MOSFET 600V Vds 30V Vgs TO-220AB

MOSFET 600V Vds 30V Vgs TO-220AB

Buy Now Datasheet
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS - 880-SIHP30N60E-GE3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
880-SIHP30N60E-GE3
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS 880-SIHP30N60E-GE3
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS

MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 211712-SIHP30N60E-GE3 SIHP30N60E-GE3 SIHP30N60E-GE3-ND SIHP30N60E-GE3 68W7067 SIHP30N60E-GE3 880-SIHP30N60E-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP30N60E-GE3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 600V, 29A, To-220Ab-3; Channel Type Vishay MOSFET MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 250000 milliwatts 250000 milliwatts 250000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
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