Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP24N65E-E3

The SiHP24N65E-E3 is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 650 V and a continuous drain current (I_D) rating of 24 A at a case temperature of 25 ¬8C. It has a low on-state resistance (R_DS(on)) of 0.145 Oc at a gate-source voltage (V_GS) of 10 V, which contributes to reduced conduction losses. The total gate charge (Q_g) is specified at a maximum of 122 nC, indicating low input capacitance and efficient switching performance. This MOSFET is housed in a TO-220AB package, making it suitable for through-hole mounting in various applications, including server and telecom power supplies, switch mode power supplies (SMPS), and industrial applications such as motor drives and battery chargers. The device operates within a temperature range of -55 ¬8C to +150 ¬8C, ensuring reliability in demanding environments. Additionally, it is avalanche energy rated, providing robustness against transient conditions. Engineers considering this component should note its balance of performance characteristics, including low switching losses and high power dissipation capability of 250 W, making it a viable option for high-efficiency designs.