Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP240N65E-GE3

The SiHP240N65E-GE3 is an N-channel MOSFET in a TO-220AB package for switch mode and power factor correction power supplies. It features a 650 V drain-source voltage rating, a typical on-state resistance of 0.208 Ω at 10 V gate-source voltage and 7 A drain current, and a total gate charge of up to 29 nC. The device includes a Kelvin source connection to reduce gate noise and is rated for 36 mJ unclamped inductive switching energy. Operating junction and storage temperatures range from -55 °C to +150 °C. The part is lead-free, halogen-free, and meets RoHS compliance.