Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHP240N60E-GE3

Description
Win Source Part Number: 1277758-SIHP240N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 78W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHP240N60E-GE3CT,SI HP240N60E-GE3DKR,SIH P240N60E-GE3CT,SIHP2 40N60E-GE3TR,SIHP240 N60E-GE3DKRINACTIVE, SIHP240N60E-GE3TR,SI HP240N60E-GE3TRINACT IVE,SIHP240N60E-GE3D KR Base Product Number: SIHP240 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277758-SIHP240N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHP240N60E-GE3-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 12A, 600V, To-220Ab; Transistor Polarity Vishay - 02AH2519 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP240N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1277758-SIHP240N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 78W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHP240N60E-GE3CT,SI HP240N60E-GE3DKR,SIH P240N60E-GE3CT,SIHP2 40N60E-GE3TR,SIHP240 N60E-GE3DKRINACTIVE, SIHP240N60E-GE3TR,SI HP240N60E-GE3TRINACT IVE,SIHP240N60E-GE3D KR Base Product Number: SIHP240 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277758-SIHP240N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277758-SIHP240N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277758-SIHP240N60E-GE3
Win Source Part Number: 1277758-SIHP240N60E- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 78W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHP240N60E-GE3CT,SI HP240N60E-GE3DKR,SIH P240N60E-GE3CT,SIHP2 40N60E-GE3TR,SIHP240 N60E-GE3DKRINACTIVE, SIHP240N60E-GE3TR,SI HP240N60E-GE3TRINACT IVE,SIHP240N60E-GE3D KR Base Product Number: SIHP240 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277758-SIHP240N60E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHP240N60E-GE3CT,SIHP240N60E-GE3DKR,SIHP240N60E-GE3CT,SIHP240N60E-GE3TR,SIHP240N60E-GE3DKRINACTIVE,SIHP240N60E-GE3TR,SIHP240N60E-GE3TRINACTIVE,SIHP240N60E-GE3DKR
Base Product Number: SIHP240
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHP240N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP240N60E-GE3-ND
Single FETs, MOSFETs SIHP240N60E-GE3-ND
N-Channel 600V 12A (Tc) 78W (Tc) Through Hole TO-220AB

N-Channel 600V 12A (Tc) 78W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-SIHP240N60E-GE3
MOSFET Transistor 278-SIHP240N60E-GE3
Power Field-Effect Transistor, Product overview: SIHP240N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP240N60E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SIHP240N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP240N60E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHP240N60E-GE3
MOSFET SIHP240N60E-GE3
MOSFET 600V Vds; +/-30V Vgs TO-220AB

MOSFET 600V Vds; +/-30V Vgs TO-220AB

Buy Now Datasheet
Mosfet, N-Ch, 12A, 600V, To-220Ab; Transistor Polarity Vishay - 02AH2519 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 12A, 600V, To-220Ab; Transistor Polarity Vishay
02AH2519
Mosfet, N-Ch, 12A, 600V, To-220Ab; Transistor Polarity Vishay 02AH2519
MOSFET, N-CH, 12A, 600V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.208ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 12A, 600V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.208ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP240N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP240N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP240N60E-GE3
MOSFET N-CH 600V 12A TO220AB

MOSFET N-CH 600V 12A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277758-SIHP240N60E-GE3 SIHP240N60E-GE3-ND 278-SIHP240N60E-GE3 SIHP240N60E-GE3 02AH2519 SIHP240N60E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Transistor MOSFET Mosfet, N-Ch, 12A, 600V, To-220Ab; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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