Vishay Intertechnology, Inc. 600V 158mOhm 10V MOSFET Transistor SIHP23N60E-GE3

MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS Product overview: SIHP23N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 158mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 158mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP23N60E-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1096440-SIHP23N60E-GE3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 2418pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 158 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-220AB