Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP22N65E-GE3

N-Channel 650V 22A (Tc) 227W (Tc) Through Hole TO-220AB

MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS Product overview: SIHP22N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 180mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 180mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP22N65E-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 895006-SIHP22N65E-GE3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 22A (Tc) 227W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: SIHP22
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHP22N65E-GE3CT, SIHP22N65E-GE3CT-ND