N-Channel 600V 19A (Tc) 179W (Tc) Through Hole TO-220 Full Pack
Power Field-Effect Transistor, Product overview: SIHP22N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP22N60EF-GE3 can be used for catalog matching and distributor lookup.
EF Series Power MOSFET With Fast Body Di
EF Series Power MOSFET With Fast Body Di
EF Series Power MOSFET With Fast Body Di
Win Source Part Number: 1277712-SIHP22N60EF-
Category: Discrete Semiconductor Products>Transistors
Series: EF
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP22
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 600V, 19A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.158ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
MOSFET N-CH 600V 19A TO220AB
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHP22N60EF-GE3-ND | 278-SIHP22N60EF-GE3 | 1884878 | 1884996P | 1277712-SIHP22N60EF-GE3 | 06AH4239 | SIHP22N60EF-GE3 | SIHP22N60EF-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 600V, 19A, 150Deg C, 179W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; To-220ab | TO-220; TO-220 | TO-220; SOT3 | TO-3 | TO-220; TO-220-3 Full Pack | ||
| MOSFET Operating Mode | Enhancement | |||||||
| Number of units in IC | 1 |
