N-Channel 600V 21A (Tc) 227W (Tc) Through Hole
Manufacturer: Vishay Siliconix
Win Source Part Number: 803693-SIHP22N60E-GE
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 227W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 180mOhm at 11A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 86nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1920pF at 100V
Current - Continuous Drain (Id) at 25°C: 21A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±30V
600V N-CH MOSFET, 21A, 180mR, TO-220 Product overview: SIHP22N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 21A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP22N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 21A TO220AB
MOSFET, N-CH, 600V, 21A, 150DEG C, 227W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
MOSFET 600V Vds 30V Vgs TO-220AB
MOSFET N-CH 600V 21A TO220AB
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP22N60E-GE3-ND | 803693-SIHP22N60E-GE3 | 278-SIHP22N60E-GE3 | SIHP22N60E-GE3 | 51AC9530 | 880-SIHP22N60E-GE3 | SIHP22N60E-GE3 | SIHP22N60E-GE3 |
| Product Name | Single FETs, MOSFETs | FETs - Single - SIHP22N60E-GE3 | 600V 21A TO-220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 21A, 150Deg C, 227W; Channel Type Vishay | MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3 | TO-220; TO-220-3 | TO-3 | TO-220; TO-220-3 | |||
| PD | 227000 milliwatts | 227000 milliwatts | 227000 milliwatts | 227000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Packing Method | Tube; Tube | Tube; Tube | Tube; Tube |
