Win Source Part Number: 1093068-SIHP22N60AEL
Category: Discrete Semiconductor Products>Transistors
Series: EL
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHP22N60AEL-GE3TR,S
Base Product Number: SIHP22
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 21A (Tc) 208W (Tc) Through Hole TO-220AB
MOSFET 600V Vds 30V Vgs TO-220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1093068-SIHP22N60AEL-GE3 | SIHP22N60AEL-GE3-ND | SIHP22N60AEL-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
