MOSFET N-CH 600V 21A TO220AB
N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 895002-SIHP21N60EF-G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: SIHP21
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
MOSFET N-CH 600V 21A TO220AB
MOSFET 600V Vds 30V Vgs TO-220AB
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP21N60EF-GE3 | SIHP21N60EF-GE3-ND | 895002-SIHP21N60EF-GE3 | SIHP21N60EF-GE3 | SIHP21N60EF-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP21N60EF-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 600 volts | ||||
| IDSS | 21000 milliamps |
