Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP21N60EF-GE3

Description
N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHP21N60EF-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP21N60EF-GE3-ND
Single FETs, MOSFETs SIHP21N60EF-GE3-ND
N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB

N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
N-Channel 21A 600V 0.176ohm MOSFET Transistor
278-SIHP21N60EF-GE3
N-Channel 21A 600V 0.176ohm MOSFET Transistor 278-SIHP21N60EF-GE3
Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP21N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 21A, 600V, 0.176ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21A, 600V, 0.176ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP21N60EF-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP21N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 21A, 600V, 0.176ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21A, 600V, 0.176ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP21N60EF-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP21N60EF-GE3 - 895002-SIHP21N60EF-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP21N60EF-GE3
895002-SIHP21N60EF-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP21N60EF-GE3 895002-SIHP21N60EF-GE3
Manufacturer: Vishay Win Source Part Number: 895002-SIHP21N60EF-G E3 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-220AB Package: TO-220-3 Package: Tube Mounting: Through Hole Family Name: SIHP21 Categories: Discrete Semiconductor Products Case / Package: TO-220AB ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 85 pct. Supply and Demand Status: Balance Quantity per package: 1000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095

Manufacturer: Vishay
Win Source Part Number: 895002-SIHP21N60EF-GE3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: SIHP21
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095

Buy Now Datasheet
Single FETs, MOSFETs - SIHP21N60EF-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHP21N60EF-GE3
Single FETs, MOSFETs SIHP21N60EF-GE3
MOSFET N-CH 600V 21A TO220AB

MOSFET N-CH 600V 21A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-220AB

MOSFET 600V Vds 30V Vgs TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP21N60EF-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP21N60EF-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP21N60EF-GE3
MOSFET N-CH 600V 21A TO220AB

MOSFET N-CH 600V 21A TO220AB

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIHP21N60EF-GE3-ND 278-SIHP21N60EF-GE3 895002-SIHP21N60EF-GE3 SIHP21N60EF-GE3 SIHP21N60EF-GE3 SIHP21N60EF-GE3
Product Name Single FETs, MOSFETs N-Channel 21A 600V 0.176ohm MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP21N60EF-GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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