MOSFET N-CH 500V 18A TO220AB
N-Channel 500V 18A (Tc) 223W (Tc) Through Hole TO-220AB
500V 18A N-CH MOSFET TO-220AB Product overview: SIHP18N50C-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHP18N50C-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 064640-SIHP18N50C-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 223W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 2942pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 560V, 18A; Channel Type:N Channel; Drain Source Voltage Vds:560V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 500V, 0.27OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 500V 18A TO220AB
MOSFET 500V Vds 30V Vgs TO-220AB
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP18N50C-E3 | SIHP18N50C-E3-ND | 2088-SIHP18N50C-E3 | 064640-SIHP18N50C-E3 | 35R0016 | 22265771 | SIHP18N50C-E3 | SIHP18N50C-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 500V 18A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP18N50C-E3 | N Channel Mosfet, 560V, 18A; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 500 volts | 500 volts | ||||||
| IDSS | 18000 milliamps | 18000 milliamps |
