Manufacturer: Vishay
Win Source Part Number: 895000-SIHP17N80E-GE
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 800 V 15A (Tc) 208W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: SIHP17
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Power Field-Effect Transistor, Product overview: SIHP17N80E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP17N80E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-220AB
MOSFET N-CH 800V 15A TO220AB
MOSFET N-CH 800V 15A TO220AB
MOSFET, N-CH, 800V, 15A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 800V Vds 30V Vgs TO-220AB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 895000-SIHP17N80E-GE3 | 278-SIHP17N80E-GE3 | 742-SIHP17N80E-GE3-ND | SIHP17N80E-GE3 | SIHP17N80E-GE3 | 28AC2106 | SIHP17N80E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP17N80E-GE3 | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 15A, To-220Ab; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 800 volts |
