Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP15N60E-BE3

The SiHP15N60E-BE3 is an N-channel MOSFET in a TO-220AB package designed for high-efficiency switching applications such as server power supplies and solar inverters. It has a maximum drain-source voltage of 600 V, a continuous drain current of 15 A at 25 °C, and a maximum power dissipation of 180 W. The device features a maximum on-state resistance of 0.28 Ω at 10 V gate-source voltage, a total gate charge of 78 nC, and is rated for single pulse avalanche energy of 102 mJ. It operates from -55 °C to 150 °C junction temperature and meets RoHS compliance. Thermal resistance from junction to case is 0.7 °C/W. The part is lead-free and halogen-free, with an alternative manufacturing location denoted by the "-BE3" suffix.