Power Field-Effect Transistor, 14.5A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP15N50E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.5A, 500V, 0.28ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.5A, 500V, 0.28ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP15N50E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 500V 14.5A (Tc) 156W (Tc) Through Hole TO-220AB
Win Source Part Number: 1277892-SIHP15N50E-G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP15
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 500V Vds 30V Vgs TO-220AB
MOSFET N-CH 500V 14.5A TO220AB
MOSFET, N-CH, 500V, 14.5A, TO220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:14.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHP15N50E-GE3 | SIHP15N50E-GE3-ND | 1277892-SIHP15N50E-GE3 | SIHP15N50E-GE3 | SIHP15N50E-GE3 | 38Y8552 | 43Y2399 |
| Product Name | N-Channel 14.5A 500V 0.28ohm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 500V, 14.5A, To220Ab-3; Channel Type Vishay | Mosfet Transistor, N Channel, 14.5 A, 500 V, 0.243 Ohm, 10 V, 4 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel |
