Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHP15N50E-GE3

Description
Win Source Part Number: 1277892-SIHP15N50E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP15 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277892-SIHP15N50E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP15 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277892-SIHP15N50E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277892-SIHP15N50E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277892-SIHP15N50E-GE3
Win Source Part Number: 1277892-SIHP15N50E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP15 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277892-SIHP15N50E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP15
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHP15N50E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP15N50E-GE3-ND
Single FETs, MOSFETs SIHP15N50E-GE3-ND
N-Channel 500V 14.5A (Tc) 156W (Tc) Through Hole TO-220AB

N-Channel 500V 14.5A (Tc) 156W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
N-Channel 14.5A 500V 0.28ohm MOSFET Transistor
278-SIHP15N50E-GE3
N-Channel 14.5A 500V 0.28ohm MOSFET Transistor 278-SIHP15N50E-GE3
Power Field-Effect Transistor, 14.5A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP15N50E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.5A, 500V, 0.28ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.5A, 500V, 0.28ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP15N50E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 14.5A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHP15N50E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 14.5A, 500V, 0.28ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 14.5A, 500V, 0.28ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP15N50E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 500V Vds 30V Vgs TO-220AB

MOSFET 500V Vds 30V Vgs TO-220AB

Buy Now Datasheet
Mosfet, N-Ch, 500V, 14.5A, To220Ab-3; Channel Type Vishay - 38Y8552 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 14.5A, To220Ab-3; Channel Type Vishay
38Y8552
Mosfet, N-Ch, 500V, 14.5A, To220Ab-3; Channel Type Vishay 38Y8552
MOSFET, N-CH, 500V, 14.5A, TO220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:14.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 500V, 14.5A, TO220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:14.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 14.5 A, 500 V, 0.243 Ohm, 10 V, 4 V Rohs Compliant Vishay - 43Y2399 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 14.5 A, 500 V, 0.243 Ohm, 10 V, 4 V Rohs Compliant Vishay
43Y2399
Mosfet Transistor, N Channel, 14.5 A, 500 V, 0.243 Ohm, 10 V, 4 V Rohs Compliant Vishay 43Y2399
MOSFET Transistor, N Channel, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP15N50E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP15N50E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP15N50E-GE3
MOSFET N-CH 500V 14.5A TO220AB

MOSFET N-CH 500V 14.5A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277892-SIHP15N50E-GE3 SIHP15N50E-GE3-ND 278-SIHP15N50E-GE3 SIHP15N50E-GE3 38Y8552 43Y2399 SIHP15N50E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 14.5A 500V 0.28ohm MOSFET Transistor MOSFET Mosfet, N-Ch, 500V, 14.5A, To220Ab-3; Channel Type Vishay Mosfet Transistor, N Channel, 14.5 A, 500 V, 0.243 Ohm, 10 V, 4 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
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