Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N60E-GE3 SIHP12N60E-GE3

Manufacturer: Vishay
Win Source Part Number: 211708-SIHP12N60E-GE3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

600V 12A N-CH MOSFET TO-220-3 Through Hole Product overview: SIHP12N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 12A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 600V, 12A, TO-220, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP12N60E-GE3 can be used for catalog matching and distributor lookup.

N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB