N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 211707-SIHP12N60E-E3
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 937pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 12A TO220AB
MOSFET 600V Vds 30V Vgs TO-220AB
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHP12N60E-E3-ND | 211707-SIHP12N60E-E3 | SIHP12N60E-E3 | SIHP12N60E-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHP12N60E-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | |
| V(BR)DSS | 600 volts |
