Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP12N60E-BE3

Description
N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIHP12N60E-BE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHP12N60E-BE3-ND
Single FETs, MOSFETs 742-SIHP12N60E-BE3-ND
N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB

N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP12N60E-BE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP12N60E-BE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP12N60E-BE3
MOSFET N-CH 600V 12A TO220AB

MOSFET N-CH 600V 12A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited
Product Category Transistors RF Transistors
Product Number 742-SIHP12N60E-BE3-ND SIHP12N60E-BE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

 - AUIRG4BC30U-S - Rochester Electronics
Specs
Package Type D2PAK
Packing Method Tube; Tube
View Details
6 suppliers
DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor - TGF2929-FS - Qorvo
Specs
Transistor Technology / Material DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor
Package Type NI-360
Power Gain 14 dB
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB1392C-E - 906329-2SB1392C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details