Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP12N50E-BE3

The SiHP12N50E is an N-channel MOSFET in a TO-220AB package designed for switch-mode power supplies and applications requiring low switching and conduction losses. It has a drain-source voltage rating of 500 V, a continuous drain current of 10.5 A at 25 °C, and a maximum power dissipation of 114 W. The on-state resistance is 0.380 Ω at 10 V gate-source voltage and 6 A drain current. The device features a gate charge of 50 nC, reverse recovery time of 244 ns, and is rated for 103 mJ single-pulse avalanche energy. The operating junction and storage temperature range is from -55 °C to +150 °C. The part is lead-free and halogen-free.