Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP12N50C-E3

N-Channel 500V 12A (Tc) 208W (Tc) Through Hole

Manufacturer: Vishay
Win Source Part Number: 1096436-SIHP12N50C-E3
Packaging: Cut Reel
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1375pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 555 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

MOSFET N-CH 500V 12A TO220AB Product overview: SIHP12N50C-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHP12N50C-E3 can be used for catalog matching and distributor lookup.