Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP11N80E-BE3

The SiHP11N80E is an N-channel MOSFET designed for high-voltage switching applications such as server and telecom power supplies, SMPS, PFC, and renewable energy systems. It is packaged in a TO-220AB case with a maximum drain-source voltage of 800 V, a continuous drain current of 12 A at 25 °C, and a maximum power dissipation of 179 W. The device features a typical on-state resistance of 0.38 Ω at 10 V gate-source voltage, a total gate charge of up to 88 nC, and an avalanche energy rating of 226 mJ. The operating junction and storage temperature range is from -55 °C to +150 °C.