N-Channel 800V 8A (Tc) 78W (Tc) Through Hole TO-220AB
Win Source Part Number: 1277724-SIHP11N80AE-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: ,742-SIHP11N80AE-GE3
Base Product Number: SIHP11
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 800V 8A TO220AB
MOSFET, N-CH, 800V, 8A, 150DEG C, 78W ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIHP11N80AE-GE3-ND | 1277724-SIHP11N80AE-GE3 | SIHP11N80AE-GE3 | 64AH1456 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 8A, 150Deg C, 78W Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel |
