The Vishay SiHP050N60E is an N-Channel MOSFET housed in a TO-220AB package, designed for high-performance applications. It supports a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 51A at a junction temperature of 150°C. The device features a low on-resistance (R_DS(on)) of 0.043Ω at a gate-source voltage (V_GS) of 10V, which contributes to reduced conduction losses. The total gate charge (Q_g) is specified at a maximum of 130nC, indicating efficient switching performance. This MOSFET is suitable for various applications, including server and telecom power supplies, switch mode power supplies (SMPS), and industrial applications such as motor drives and battery chargers. It is rated for avalanche energy and operates effectively within a temperature range of -55°C to +150°C. The device is also compliant with RoHS standards, ensuring it meets environmental regulations.
N-Channel 600V 51A (Tc) 278W (Tc) Through Hole TO-220AB
MOSFET, N-CH, 51A, 600V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET 650V Vds 30V Vgs TO-220AB
MOSFET N-CH 600V 51A TO220AB
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-SIHP050N60E-GE3-ND | 03AH2967 | SIHP050N60E-GE3 | SIHP050N60E-GE3 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 51A, 600V, To-220Ab; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
