Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHLR110-GE3

The IRLR110, IRLU110, SiHLR110, and SiHLU110 are N-channel MOSFETs designed for switching applications with logic-level gate drive. The SiHLR110-GE3 is packaged in a DPAK (TO-252) surface-mount case, measuring up to 6.73 mm in width, 6.22 mm in length, and 2.39 mm in height. It has a drain-source voltage rating of 100 V, a maximum on-resistance of 0.54 Ω at VGS = 5.0 V, and a continuous drain current of 4.3 A at 25 °C. Repetitive avalanche energy is rated at 2.5 mJ, and the device supports a maximum junction temperature of 150 °C. The part is lead-free and halogen-free, meeting RoHS requirements. Thermal resistance from junction to ambient is 110 °C/W, and junction-to-case is 5.0 °C/W. The device is rated for automotive applications under AEC-Q200 and complies with UL 94 V-0 for flammability.