Vishay Precision Group Single FETs, MOSFETs SIHL510STRL-GE3

The IRL510S and SiHL510S are N-channel MOSFETs designed for high-current, surface-mount applications with logic-level gate drive. The SiHL510STRL-GE3 is packaged in a D2PAK (TO-263) case, supporting up to 5.6 A continuous drain current at 25 °C and 4.0 A at 100 °C, with a maximum drain-source voltage of 100 V. It features a maximum on-resistance of 0.54 Ω at V_GS = 5 V and 0.76 Ω at V_GS = 4 V, and is rated for operating junction temperatures up to 175 °C. The device is repetitive avalanche rated with 4.3 mJ of repetitive avalanche energy and meets RoHS-compliant, lead-free, and halogen-free material standards. Thermal resistance from junction to ambient is 40 °C/W when mounted on a 1" square PCB. Internal inductances are 4.5 nH (drain) and 7.5 nH (source).