Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHL080N65SF-GE3

The SiHL080N65SF-GE3 is a 650 V N-channel MOSFET with a low on-state resistance of 0.080 Ω at 25 °C, packaged in a TO-247AD 4L case. It features a fast body diode, rated for 396 mJ single-pulse avalanche energy, and supports continuous drain currents up to 46 A at 25 °C case temperature. The device exhibits low switching losses with a total gate charge of 137 nC and an effective output capacitance of 103 pF. It meets RoHS standards and is designed for high-efficiency applications including server and telecom power supplies, PFC circuits, motor drives, and solar inverters.