Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHL033N60SF-GE3

SiHL033N60SF is an N-channel MOSFET in a TO-247AD 4L package designed for high-efficiency switching applications such as server power supplies, PFC circuits, and motor drives. It has a drain-source voltage rating of 600 V, a maximum on-state resistance of 0.033 Ω at 25 °C with 10 V gate drive, and a total gate charge of 258 nC. The device is rated for continuous drain current of 87 A at 25 °C and 55 A at 150 °C, with a single pulse avalanche energy of 1555 mJ. Junction-to-case thermal resistance is 0.21 °C/W, and the operating junction and storage temperature range is -55 °C to +150 °C. The part is lead-free and halogen-free, and complies with RoHS standards.