Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHL026N65E-GE3

The SiHL026N65E is an N-channel MOSFET designed for high-efficiency switching applications such as server, telecom, and solar power supplies. It is packaged in a TO-247AD 4L case and features a 650 V drain-source voltage rating, a typical on-state resistance of 0.023 Ω at 25 °C, and a total gate charge of 236 nC. The device has an avalanche energy rating of 948 mJ and supports a maximum continuous drain current of 88 A at 25 °C and 55 A at 100 °C. It operates with a junction and storage temperature range from -55 °C to +150 °C.