N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277928-SIHJ6N65E-T1
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHJ6N65E-T1-GE3DKR,
Base Product Number: SIHJ6
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
MOSFET N-CH 650V 5.6A PPAK SO-8
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHJ6N65E-T1-GE3TR-ND | 1277928-SIHJ6N65E-T1-GE3 | SIHJ6N65E-T1-GE3 | SIHJ6N65E-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
