Vishay Intertechnology, Inc. 650V 5.6A MOSFET Transistor SIHJ6N65E-T1-GE3

Trans MOSFET N-CH 650V 5.6A 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SIHJ6N65E-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHJ6N65E-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 650V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 1277928-SIHJ6N65E-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHJ6N65E-T1-GE3DKR,SIHJ6N65E-T1-GE3CT,SIHJ6N65E-T1-GE3TR
Base Product Number: SIHJ6
Drive Voltage (Max Rds On, Min Rds On): 10V