Manufacturer: Vishay
Win Source Part Number: 1000907-SIHJ10N60E-T
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 784pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 10A PPAK SO-8
MOSFET N-CH 600V 10A PPAK SO-8
N-Channel 600V 10A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8
Power Field-Effect Transistor, Product overview: SIHJ10N60E-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHJ10N60E-T1-GE
MOSFET 600V Vds 30V Vgs PowerPAK SO-8L
MOSFET N-CH 600V 10A PPAK SO-8
MOSFET N-CH 600V 10A PPAK SO-8
MOSFET, N-CH, 600V, 10A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.313ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1000907-SIHJ10N60E-T1-GE3 | 742-SIHJ10N60E-T1-GE3CT-ND | 278-SIHJ10N60E-T1-GE3 | SIHJ10N60E-T1-GE3 | SIHJ10N60E-T1-GE3 | SIHJ10N60E-T1-GE3 | 10AC9112 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHJ10N60E-T1-GE3 | Single FETs, MOSFETs | MOSFET Transistor | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 10A, Powerpak So; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 89000 milliwatts | 89000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | Surface Mount | TO-3 |
