The SIHH21N60E-T1-GE3 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage (V_DS) of 600 V and a continuous drain current (I_D) of 20 A at a case temperature of 25 ¬8C. It has a low on-state resistance (R_DS(on)) of 0.153 Oc at a gate-source voltage (V_GS) of 10 V, which contributes to reduced conduction losses. The device is housed in a PowerPAK 8 x 8 package, making it suitable for surface mount applications. This MOSFET exhibits a maximum power dissipation of 104 W and operates within a temperature range of -55 ¬8C to +150 ¬8C. It features low input capacitance and a total gate charge (Q_g) of 83 nC, which helps minimize switching losses. The device is avalanche rated, providing robustness in demanding applications. Typical applications include server and telecom power supplies, switch mode power supplies (SMPS), and various industrial applications such as motor drives and renewable energy systems. The product is lead-free and halogen-free, aligning with environmental compliance standards.
Manufacturer: Vishay
Win Source Part Number: 894994-SIHH21N60E-T1
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIHH21
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 8 x 8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHH21N60E-T1-GE3CT,
N-Channel 600V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 600V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8
N-Channel 600V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8
Power Field-Effect Transistor, 20A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 Product overview: SIHH21N60E-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 600V, 0.176ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 600V, 0.176ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH21N60E-T1-GE
MOSFET N-CH 600V 20A PPAK 8 X 8
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894994-SIHH21N60E-T1-GE3 | SIHH21N60E-T1-GE3TR-ND | 278-SIHH21N60E-T1-GE3 | SIHH21N60E-T1-GE3 | SIHH21N60E-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHH21N60E-T1-GE3 | Single FETs, MOSFETs | N-Channel 20A 600V 0.176ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
