Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHH11N60E-T1-GE3 SIHH11N60E-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 142947-SIHH11N60E-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 114W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 8 x 8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1076pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 339 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): AOV15S60; SiHH11N60EF-T1-GE3; STL19N60M2;
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

N-Channel 600V 11A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8

Power Field-Effect Transistor, 11A I(D), 600V, 0.339ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 Product overview: SIHH11N60E-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 11A, 600V, 0.339ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 11A, 600V, 0.339ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH11N60E-T1-GE3 can be used for catalog matching and distributor lookup.