Vishay Precision Group Single FETs, MOSFETs SIHH070N60EF-T1GE3

Description
N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
Request a Quote Datasheet
Description
N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIHH070N60EF-T1GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHH070N60EF-T1GE3CT-ND
Single FETs, MOSFETs 742-SIHH070N60EF-T1GE3CT-ND
N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIHH070N60EF-T1GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHH070N60EF-T1GE3DKR-ND
Single FETs, MOSFETs 742-SIHH070N60EF-T1GE3DKR-ND
N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIHH070N60EF-T1GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHH070N60EF-T1GE3TR-ND
Single FETs, MOSFETs 742-SIHH070N60EF-T1GE3TR-ND
N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

N-Channel 600V 36A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

Buy Now Datasheet
MOSFET Transistor 278-SIHH070N60EF-T1GE3
Power Field-Effect Transistor, Product overview: SIHH070N60EF-T1GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH070N60EF-T1G E3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SIHH070N60EF-T1GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHH070N60EF-T1GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277714-SIHH070N60EF-T1GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277714-SIHH070N60EF-T1GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277714-SIHH070N60EF-T1GE3
Win Source Part Number: 1277714-SIHH070N60EF -T1GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: EF Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 202W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8 Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2647 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIHH070N60EF-T1G E3CT,742-SIHH070N60E F-T1GE3DKR,742-SIHH0 70N60EF-T1GE3TR Base Product Number: SIHH070 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277714-SIHH070N60EF-T1GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: EF
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 202W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2647 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHH070N60EF-T1GE3CT,742-SIHH070N60EF-T1GE3DKR,742-SIHH070N60EF-T1GE3TR
Base Product Number: SIHH070
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Mosfet, N-Ch, 600V, 36A, 150Deg C, 202W Rohs Compliant Vishay - 41AH4758 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 36A, 150Deg C, 202W Rohs Compliant Vishay
41AH4758
Mosfet, N-Ch, 600V, 36A, 150Deg C, 202W Rohs Compliant Vishay 41AH4758
MOSFET, N-CH, 600V, 36A, 150DEG C, 202W ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 36A, 150DEG C, 202W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHH070N60EF-T1GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHH070N60EF-T1GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHH070N60EF-T1GE3
MOSFET N-CH 600V 36A PPAK 8 X 8

MOSFET N-CH 600V 36A PPAK 8 X 8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SIHH070N60EF-T1GE3CT-ND 278-SIHH070N60EF-T1GE3 1277714-SIHH070N60EF-T1GE3 41AH4758 SIHH070N60EF-T1GE3
Product Name Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, N-Ch, 600V, 36A, 150Deg C, 202W Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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