Vishay Precision Group Single FETs, MOSFETs SIHG80N60E-GE3

Description
N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC
  • Single FETs, MOSFETs - SIHG80N60E-GE3-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SIHG80N60E-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 - 774965-SIHG80N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG80N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay - 75AH9195 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHG80N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG80N60E-GE3-ND
Single FETs, MOSFETs SIHG80N60E-GE3-ND
N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC

N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Single FETs, MOSFETs - SIHG80N60E-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHG80N60E-GE3
Single FETs, MOSFETs SIHG80N60E-GE3
MOSFET N-CH 600V 80A TO247AC

MOSFET N-CH 600V 80A TO247AC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 - 774965-SIHG80N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3
774965-SIHG80N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 774965-SIHG80N60E-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 774965-SIHG80N60E-GE 3 Series: E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: SiHG80N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247AC Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 443nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SCT3030ALGC11; R6576KNZ1C9; SCT3030ALHRC11; R6576ENZ1C9; ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 774965-SIHG80N60E-GE3
Series: E
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: SiHG80N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 443nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 520W (Tc)
Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SCT3030ALGC11; R6576KNZ1C9; SCT3030ALHRC11; R6576ENZ1C9;
ECCN: EAR99
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG80N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG80N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG80N60E-GE3
MOSFET N-CH 600V 80A TO247AC

MOSFET N-CH 600V 80A TO247AC

Supplier's Site
Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay - 75AH9195 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay
75AH9195
Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay 75AH9195
MOSFET, N-CH, 600V, 80A, 150DEG C, 520W ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 80A, 150DEG C, 520W ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHG80N60E-GE3
MOSFET SIHG80N60E-GE3
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHG80N60E-GE3-ND SIHG80N60E-GE3 774965-SIHG80N60E-GE3 SIHG80N60E-GE3 75AH9195 SIHG80N60E-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
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