Vishay Precision Group Single FETs, MOSFETs SIHG80N60E-GE3

Description
MOSFET N-CH 600V 80A TO247AC
  • Single FETs, MOSFETs - SIHG80N60E-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 - 774965-SIHG80N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHG80N60E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG80N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay - 75AH9195 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 600V 80A TO247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHG80N60E-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHG80N60E-GE3
Single FETs, MOSFETs SIHG80N60E-GE3
MOSFET N-CH 600V 80A TO247AC

MOSFET N-CH 600V 80A TO247AC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 - 774965-SIHG80N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3
774965-SIHG80N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 774965-SIHG80N60E-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 774965-SIHG80N60E-GE 3 Series: E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: SiHG80N60E Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-247AC Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 443nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 520W (Tc) Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SCT3030ALGC11; R6576KNZ1C9; SCT3030ALHRC11; R6576ENZ1C9; ECCN: EAR99 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 774965-SIHG80N60E-GE3
Series: E
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: SiHG80N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 443nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6900pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 520W (Tc)
Rds On (Maximum) @ Id, Vgs: 30 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SCT3030ALGC11; R6576KNZ1C9; SCT3030ALHRC11; R6576ENZ1C9;
ECCN: EAR99
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SIHG80N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG80N60E-GE3-ND
Single FETs, MOSFETs SIHG80N60E-GE3-ND
N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC

N-Channel 600V 80A (Tc) 520W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG80N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG80N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG80N60E-GE3
MOSFET N-CH 600V 80A TO247AC

MOSFET N-CH 600V 80A TO247AC

Supplier's Site
Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay - 75AH9195 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay
75AH9195
Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay 75AH9195
MOSFET, N-CH, 600V, 80A, 150DEG C, 520W ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 80A, 150DEG C, 520W ROHS COMPLIANT: YES

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHG80N60E-GE3
MOSFET SIHG80N60E-GE3
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHG80N60E-GE3 774965-SIHG80N60E-GE3 SIHG80N60E-GE3-ND SIHG80N60E-GE3 75AH9195 SIHG80N60E-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG80N60E-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 80A, 150Deg C, 520W Rohs Compliant Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 80000 milliamps
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