N-Channel 600V 73A (Tc) 520W (Tc) Through Hole TO-247AC
Manufacturer: Vishay
Win Source Part Number: 211706-SIHG73N60E-GE
Packaging: Cut Reel
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 520W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 73A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 362nC @ 10V
Max Input Capacitance: 7700pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 39 mOhm @ 36A, 10V
Alternative Parts (Cross-Reference): IPW60R041C6; TSM60NB041PW C1G; SiHG73N60E-GE3; SiHG73N60E-E3;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 73A TO247AC
MOSF N CH 600V 73A E TO247AC Product overview: SIHG73N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 73A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 73A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG73N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET N-CH 600V 73A TO247AC
MOSFET, N-CH, 650V, 73A, 150DEG C, 520W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:73A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHG73N60E-GE3-ND | 211706-SIHG73N60E-GE3 | SIHG73N60E-GE3 | 278-SIHG73N60E-GE3 | SIHG73N60E-GE3 | SIHG73N60E-GE3 | 63W4113 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG73N60E-GE3 | Single FETs, MOSFETs | 600V 73A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 73A, 150Deg C, 520W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | 10V | TO-3 | ||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 520000 milliwatts | 520000 milliwatts |
