N-Channel 600V 60A (Tc) 417W (Tc) Through Hole TO-247AC
Win Source Part Number: 1277755-SIHG73N60AE-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 394 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHG73
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 60A TO247AC
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET, N-CH, 600V, 60A, 150DEG C, 417W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHG73N60AE-GE3-ND | 1277755-SIHG73N60AE-GE3 | SIHG73N60AE-GE3 | SIHG73N60AE-GE3 | 78AC6523 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 60A, 150Deg C, 417W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel |
