Power Field-Effect Transistor, 64A I(D), 650V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHG64N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 64A, 650V, 0.047ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 64A, 650V, 0.047ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG64N65E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 64A TO247AC
Manufacturer: Vishay
Win Source Part Number: 933792-SIHG64N65E-GE
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: SIHG64
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
MOSFET 650V Vds 30V Vgs TO-247AC
MOSFET N-CH 650V 64A TO247AC
MOSFET, N-CH, 650V, 64A, TO-247AC ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHG64N65E-GE3 | SIHG64N65E-GE3 | 933792-SIHG64N65E-GE3 | SIHG64N65E-GE3 | SIHG64N65E-GE3 | 26AK5801 |
| Product Name | N-Channel 64A 650V 0.047ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG64N65E-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 64A, To-247Ac Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 64000 milliamps |
