Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG64N65E-GE3 SIHG64N65E-GE3

Description
Manufacturer: Vishay Win Source Part Number: 933792-SIHG64N65E-GE 3 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: SIHG64 Categories: Discrete Semiconductor Products Case / Package: TO-247AC ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 933792-SIHG64N65E-GE 3 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: SIHG64 Categories: Discrete Semiconductor Products Case / Package: TO-247AC ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG64N65E-GE3 - 933792-SIHG64N65E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG64N65E-GE3
933792-SIHG64N65E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG64N65E-GE3 933792-SIHG64N65E-GE3
Manufacturer: Vishay Win Source Part Number: 933792-SIHG64N65E-GE 3 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: SIHG64 Categories: Discrete Semiconductor Products Case / Package: TO-247AC ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095

Manufacturer: Vishay
Win Source Part Number: 933792-SIHG64N65E-GE3
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: SIHG64
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095

Buy Now Datasheet
Single FETs, MOSFETs - SIHG64N65E-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHG64N65E-GE3
Single FETs, MOSFETs SIHG64N65E-GE3
MOSFET N-CH 650V 64A TO247AC

MOSFET N-CH 650V 64A TO247AC

Supplier's Site Datasheet
Singapore
N-Channel 64A 650V 0.047ohm MOSFET Transistor
278-SIHG64N65E-GE3
N-Channel 64A 650V 0.047ohm MOSFET Transistor 278-SIHG64N65E-GE3
Power Field-Effect Transistor, 64A I(D), 650V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHG64N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 64A, 650V, 0.047ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 64A, 650V, 0.047ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG64N65E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 64A I(D), 650V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHG64N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 64A, 650V, 0.047ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 64A, 650V, 0.047ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG64N65E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG64N65E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG64N65E-GE3
MOSFET N-CH 650V 64A TO247AC

MOSFET N-CH 650V 64A TO247AC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 650V Vds 30V Vgs TO-247AC

MOSFET 650V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Mosfet, N-Ch, 650V, 64A, To-247Ac Rohs Compliant Vishay - 26AK5801 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 64A, To-247Ac Rohs Compliant Vishay
26AK5801
Mosfet, N-Ch, 650V, 64A, To-247Ac Rohs Compliant Vishay 26AK5801
MOSFET, N-CH, 650V, 64A, TO-247AC ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 64A, TO-247AC ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 933792-SIHG64N65E-GE3 SIHG64N65E-GE3 278-SIHG64N65E-GE3 SIHG64N65E-GE3 SIHG64N65E-GE3 26AK5801
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG64N65E-GE3 Single FETs, MOSFETs N-Channel 64A 650V 0.047ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 64A, To-247Ac Rohs Compliant Vishay
Polarity N-Channel N-Channel; N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AC TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
Transistor Technology / Material MOSFET (Metal Oxide)
Unlock Full Specs
to access all available technical data