MOSFET N-CH 600V 47A TO247AC
Manufacturer: Vishay
Win Source Part Number: 211705-SIHG47N60E-GE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 9620pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 64 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC
600V 47A N-Channel MOSFET TO-247 64mR Product overview: SIHG47N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG47N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET, N CHANNEL, 600V, 47A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET N-CH 600V 47A TO247AC
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHG47N60E-GE3 | 211705-SIHG47N60E-GE3 | 1652835 | SIHG47N60E-GE3-ND | 278-SIHG47N60E-GE3 | SIHG47N60E-GE3 | 68W7055 | SIHG47N60E-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N60E-GE3 | MOSFETs | Single FETs, MOSFETs | N-Channel 600V 47A MOSFET Transistor | MOSFET | Mosfet, N Channel, 600V, 47A, To-247Ac-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| IDSS | 47000 milliamps | 47000 milliamps | ||||||
| PD | 357000 milliwatts | 357000 milliwatts | 357000 milliwatts |
