Vishay Precision Group MOSFETs SIHG47N60E-GE3

Description
MOSFET N-Channel 600V 47A TO247AC
Request a Quote Datasheet
Description
MOSFET N-Channel 600V 47A TO247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1652835 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1652835
MOSFETs 1652835
MOSFET N-Channel 600V 47A TO247AC

MOSFET N-Channel 600V 47A TO247AC

Supplier's Site
Single FETs, MOSFETs - SIHG47N60E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG47N60E-GE3-ND
Single FETs, MOSFETs SIHG47N60E-GE3-ND
N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC

N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N60E-GE3 - 211705-SIHG47N60E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N60E-GE3
211705-SIHG47N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N60E-GE3 211705-SIHG47N60E-GE3
Manufacturer: Vishay Win Source Part Number: 211705-SIHG47N60E-GE 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 47A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 9620pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 64 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211705-SIHG47N60E-GE3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 9620pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 64 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIHG47N60E-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHG47N60E-GE3
Single FETs, MOSFETs SIHG47N60E-GE3
MOSFET N-CH 600V 47A TO247AC

MOSFET N-CH 600V 47A TO247AC

Supplier's Site Datasheet
Singapore
N-Channel 600V 47A MOSFET Transistor
278-SIHG47N60E-GE3
N-Channel 600V 47A MOSFET Transistor 278-SIHG47N60E-GE3
600V 47A N-Channel MOSFET TO-247 64mR Product overview: SIHG47N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG47N60E-GE3 can be used for catalog matching and distributor lookup.

600V 47A N-Channel MOSFET TO-247 64mR Product overview: SIHG47N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG47N60E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N Channel, 600V, 47A, To-247Ac-3; Channel Type Vishay - 68W7055 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 47A, To-247Ac-3; Channel Type Vishay
68W7055
Mosfet, N Channel, 600V, 47A, To-247Ac-3; Channel Type Vishay 68W7055
MOSFET, N CHANNEL, 600V, 47A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 47A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:47A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG47N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG47N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG47N60E-GE3
MOSFET N-CH 600V 47A TO247AC

MOSFET N-CH 600V 47A TO247AC

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1652835 SIHG47N60E-GE3-ND 211705-SIHG47N60E-GE3 SIHG47N60E-GE3 278-SIHG47N60E-GE3 68W7055 SIHG47N60E-GE3 SIHG47N60E-GE3
Product Name MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N60E-GE3 Single FETs, MOSFETs N-Channel 600V 47A MOSFET Transistor Mosfet, N Channel, 600V, 47A, To-247Ac-3; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
Package Type TO-247; To-247ac TO-247; TO-247-3 TO-247; SOT3; TO-247AC TO-247; TO-247-3 TO-3; TO-247 10V
Number of units in IC 1
V(BR)DSS 600 volts 600 volts
Unlock Full Specs
to access all available technical data