Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHG47N60AEL-GE3

Description
Win Source Part Number: 1277704-SIHG47N60AEL -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: EL Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 379W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG47N60AEL-GE3CT,S IHG47N60AEL-GE3TRINA CTIVE,SIHG47N60AEL-G E3DKR,SIHG47N60AEL-G E3TR,SIHG47N60AEL-GE 3CT,SIHG47N60AEL-GE3 DKR,SIHG47N60AEL-GE3 DKRINACTIVE,SIHG47N6 0AEL-GE3TR Base Product Number: SIHG47 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277704-SIHG47N60AEL -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: EL Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 379W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG47N60AEL-GE3CT,S IHG47N60AEL-GE3TRINA CTIVE,SIHG47N60AEL-G E3DKR,SIHG47N60AEL-G E3TR,SIHG47N60AEL-GE 3CT,SIHG47N60AEL-GE3 DKR,SIHG47N60AEL-GE3 DKRINACTIVE,SIHG47N6 0AEL-GE3TR Base Product Number: SIHG47 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277704-SIHG47N60AEL-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277704-SIHG47N60AEL-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277704-SIHG47N60AEL-GE3
Win Source Part Number: 1277704-SIHG47N60AEL -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: EL Package: Tube Standard Package: 25 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 379W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG47N60AEL-GE3CT,S IHG47N60AEL-GE3TRINA CTIVE,SIHG47N60AEL-G E3DKR,SIHG47N60AEL-G E3TR,SIHG47N60AEL-GE 3CT,SIHG47N60AEL-GE3 DKR,SIHG47N60AEL-GE3 DKRINACTIVE,SIHG47N6 0AEL-GE3TR Base Product Number: SIHG47 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277704-SIHG47N60AEL-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: EL
Package: Tube
Standard Package: 25
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 379W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHG47N60AEL-GE3CT,SIHG47N60AEL-GE3TRINACTIVE,SIHG47N60AEL-GE3DKR,SIHG47N60AEL-GE3TR,SIHG47N60AEL-GE3CT,SIHG47N60AEL-GE3DKR,SIHG47N60AEL-GE3DKRINACTIVE,SIHG47N60AEL-GE3TR
Base Product Number: SIHG47
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHG47N60AEL-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG47N60AEL-GE3-ND
Single FETs, MOSFETs SIHG47N60AEL-GE3-ND
N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC

N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
2088-SIHG47N60AEL-GE3
MOSFET Transistor 2088-SIHG47N60AEL-GE3
Power Field-Effect Transistor, Product overview: SIHG47N60AEL-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHG47N60AEL-GE 3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SIHG47N60AEL-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHG47N60AEL-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277704-SIHG47N60AEL-GE3 SIHG47N60AEL-GE3-ND 2088-SIHG47N60AEL-GE3 SIHG47N60AEL-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Transistor MOSFET
Polarity N-Channel N-Channel
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