The SIHG47N60AEF-GE3 is an N-Channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage (V_DS) of 600 V and a continuous drain current (I_D) rating of 40 A at a case temperature of 25 ¬8C. It has a low on-state resistance (R_DS(on)) of 0.061 Oc at a gate-source voltage (V_GS) of 10 V, which contributes to reduced conduction losses. The device is packaged in a TO-247AC format, suitable for through-hole mounting. This MOSFET exhibits a maximum power dissipation of 313 W and operates within a temperature range of -55 ¬8C to +150 ¬8C. It features a fast body diode with a continuous source-drain current rating of 40 A and a pulsed current rating of 111 A. The total gate charge (Q_g) is specified at a maximum of 189 nC, indicating low input capacitance and efficient switching performance. Applications for the SIHG47N60AEF-GE3 include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC) power supplies, and various industrial applications such as welding and motor drives. The device is also avalanche energy rated, enhancing its reliability in demanding environments.
Manufacturer: Vishay
Win Source Part Number: 894988-SIHG47N60AEF-
Series: EF
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 40A (Tc) 313W (Tc) Through Hole TO-247AC
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: SIHG47
Categories: Discrete Semiconductor Products
Case / Package: TO-247AC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Balance
Quantity per package: 500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Power Field-Effect Transistor, Product overview: SIHG47N60AEF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG47N60AEF-GE3
N-Channel 600V 40A (Tc) 313W (Tc) Through Hole TO-247AC
MOSFET N-CH 600V 40A TO247AC
MOSFET, N-CH, 600V, 40A, 150DEG C, 313W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs TO-247AC
MOSFET N-CH 600V 40A TO247AC
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 894988-SIHG47N60AEF-GE3 | 278-SIHG47N60AEF-GE3 | SIHG47N60AEF-GE3-ND | SIHG47N60AEF-GE3 | 78AC6522 | SIHG47N60AEF-GE3 | SIHG47N60AEF-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG47N60AEF-GE3 | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 40A, 150Deg C, 313W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | Through Hole | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts |
