Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG40N60E-GE3 SIHG40N60E-GE3

Manufacturer: Vishay Siliconix
Win Source Part Number: 774933-SIHG40N60E-GE3
Series: E
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: SiHG40N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AC
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 197nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4436pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 329W (Tc)
Rds On (Maximum) @ Id, Vgs: 75 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): R6535KNZC8; R6530KNZC8; R6530ENZC8; R6535ENZVC8;
ECCN: EAR99
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Power Field-Effect Transistor, 40A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Product overview: SIHG40N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 600V, 0.075ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 600V, 0.075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG40N60E-GE3 can be used for catalog matching and distributor lookup.

N-Channel 600V 40A (Tc) 329W (Tc) Through Hole TO-247AC