Vishay Precision Group 650V 32.4A MOSFET Transistor SIHG33N65E-GE3

Description
MOSFET N-CH 650V 32.4A TO247AC Product overview: SIHG33N65E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 32.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 32.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG33N65E-GE3 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 650V 32.4A TO247AC Product overview: SIHG33N65E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 32.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 32.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG33N65E-GE3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
650V 32.4A MOSFET Transistor
278-SIHG33N65E-GE3
650V 32.4A MOSFET Transistor 278-SIHG33N65E-GE3
MOSFET N-CH 650V 32.4A TO247AC Product overview: SIHG33N65E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 32.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 32.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG33N65E-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 32.4A TO247AC Product overview: SIHG33N65E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 32.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 32.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG33N65E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHG33N65E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG33N65E-GE3-ND
Single FETs, MOSFETs SIHG33N65E-GE3-ND
N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC

N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1093063-SIHG33N65E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1093063-SIHG33N65E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1093063-SIHG33N65E-GE3
Win Source Part Number: 1093063-SIHG33N65E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 313W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHG33N60EF-GE3; STWA45N65M5; STW50N65DM2AG; FCH110N65F-F155; SIHG33N60E-GE3; FCH099N60ESIHG33N65E GE3; ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHG33N65E-GE3CT,SIH G33N65E-GE3DKR-ND,SI HG33N65E-GE3TR,SIHG3 3N65E-GE3TR-ND,SIHG3 3N65E-GE3DKR,SIHG33N 65E-GE3CT-ND,SIHG33N 65E-GE3DKRINACTIVE,S IHG33N65E-GE3TRINACT IVE Base Product Number: SIHG33 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1093063-SIHG33N65E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHG33N60EF-GE3; STWA45N65M5; STW50N65DM2AG; FCH110N65F-F155; SIHG33N60E-GE3; FCH099N60ESIHG33N65EGE3;
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHG33N65E-GE3CT,SIHG33N65E-GE3DKR-ND,SIHG33N65E-GE3TR,SIHG33N65E-GE3TR-ND,SIHG33N65E-GE3DKR,SIHG33N65E-GE3CT-ND,SIHG33N65E-GE3DKRINACTIVE,SIHG33N65E-GE3TRINACTIVE
Base Product Number: SIHG33
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET 650V Vds 30V Vgs TO-247AC

MOSFET 650V Vds 30V Vgs TO-247AC

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG33N65E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG33N65E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG33N65E-GE3
MOSFET N-CH 650V 32.4A TO247AC

MOSFET N-CH 650V 32.4A TO247AC

Supplier's Site
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity Vishay - 01AC4958 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity Vishay
01AC4958
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity Vishay 01AC4958
MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-SIHG33N65E-GE3 SIHG33N65E-GE3-ND 1093063-SIHG33N65E-GE3 SIHG33N65E-GE3 SIHG33N65E-GE3 01AC4958
Product Name 650V 32.4A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity Vishay
Polarity N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement
PD 313 milliwatts 313000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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