N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
MOSFET N-CH 650V 32.4A TO247AC Product overview: SIHG33N65E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 32.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 32.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHG33N65E-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1093063-SIHG33N65E-G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHG33N60EF-GE3; STWA45N65M5; STW50N65DM2AG; FCH110N65F-F155; SIHG33N60E-GE3; FCH099N60ESIHG33N65E
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHG33N65E-GE3CT,SIH
Base Product Number: SIHG33
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 650V Vds 30V Vgs TO-247AC
MOSFET N-CH 650V 32.4A TO247AC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHG33N65E-GE3-ND | 278-SIHG33N65E-GE3 | 1093063-SIHG33N65E-GE3 | 01AC4958 | SIHG33N65E-GE3 | SIHG33N65E-GE3 |
| Product Name | Single FETs, MOSFETs | 650V 32.4A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247-3 | Tube | TO-247; SOT3 | TO-3; TO-247 | TO-247; TO-247-3 | |
| MOSFET Operating Mode | Enhancement | |||||
| PD | 313 milliwatts | 313000 milliwatts |
