Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 SIHG33N60E-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096433-SIHG33N60E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 278W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 3508pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 - 1096433-SIHG33N60E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHG33N60E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG33N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay - 68W7054 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay - 68W7053 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096433-SIHG33N60E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 278W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 3508pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 - 1096433-SIHG33N60E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3
1096433-SIHG33N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 1096433-SIHG33N60E-GE3
Manufacturer: Vishay Win Source Part Number: 1096433-SIHG33N60E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 278W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 3508pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096433-SIHG33N60E-GE3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3508pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIHG33N60E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG33N60E-GE3-ND
Single FETs, MOSFETs SIHG33N60E-GE3-ND
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC

N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG33N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG33N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG33N60E-GE3
MOSFET N-CH 600V 33A TO247AC

MOSFET N-CH 600V 33A TO247AC

Supplier's Site
Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay - 68W7054 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay
68W7054
Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay 68W7054
MOSFET, N CH, 600V, 33A, TO-247AC-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CH, 600V, 33A, TO-247AC-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay - 68W7053 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay
68W7053
Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay 68W7053
MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:-RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:-RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHG33N60E-GE3
MOSFET SIHG33N60E-GE3
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096433-SIHG33N60E-GE3 SIHG33N60E-GE3-ND SIHG33N60E-GE3 68W7054 68W7053 SIHG33N60E-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 278000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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