Vishay Precision Group Single FETs, MOSFETs SIHG33N60E-GE3

Description
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC
Request a Quote Datasheet
Description
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHG33N60E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHG33N60E-GE3-ND
Single FETs, MOSFETs SIHG33N60E-GE3-ND
N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC

N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 - 1096433-SIHG33N60E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3
1096433-SIHG33N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 1096433-SIHG33N60E-GE3
Manufacturer: Vishay Win Source Part Number: 1096433-SIHG33N60E-G E3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 278W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 3508pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096433-SIHG33N60E-GE3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 3508pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 99 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHG33N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHG33N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHG33N60E-GE3
MOSFET N-CH 600V 33A TO247AC

MOSFET N-CH 600V 33A TO247AC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-247AC

MOSFET 600V Vds 30V Vgs TO-247AC

Buy Now Datasheet
Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay - 68W7054 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay
68W7054
Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay 68W7054
MOSFET, N CH, 600V, 33A, TO-247AC-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

MOSFET, N CH, 600V, 33A, TO-247AC-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay - 68W7053 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay
68W7053
Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay 68W7053
MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:-RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 33A, TO-247AC-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHG33N60E-GE3-ND 1096433-SIHG33N60E-GE3 SIHG33N60E-GE3 SIHG33N60E-GE3 68W7054 68W7053
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHG33N60E-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Ch, 600V, 33A, To-247Ac-3, Full Reel; Channel Type Vishay Mosfet, N Channel, 600V, 33A, To-247Ac-3; Channel Type Vishay
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AC TO-247; TO-247-3 TO-3; TO-247 TO-3; TO-247
V(BR)DSS 600 volts
PD 278000 milliwatts
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